Electrolyte-Gated Vertical Transistor Charge Transport Enables Photo-Switching

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Advanced Electronic Materials
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Vieira D.H.
Nogueira G.L.
Merces L.
Bufon C.C.B.
Alves N.
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© 2024 The Authors. Advanced Electronic Materials published by Wiley-VCH GmbH.Proposals for new architectures that shorten the length of the transistor channel without the need for high-end techniques are the focus of very recent breakthrough research. Although vertical and electrolyte-gate transistors are previously developed separately, recent advances have introduced electrolytes into vertical transistors, resulting in electrolyte-gated vertical field-effect transistors (EGVFETs), which feature lower power consumption and higher capacitance. Here, EGVFETs are employed to study the charge transport mechanism of spray-pyrolyzed zinc oxide (ZnO) films to develop a new photosensitive switch concept. The EGVFET's diode cell revealed a current-voltage relationship arising from space-charge-limited current (SCLC), whereas its capacitor cell provided the field-effect role in charge accumulation in the device's source perforations. The findings elucidate how the field effect causes a continuous shift in SCLC regimes, impacting the switching dynamics of the transistor. It is found ultraviolet light may mimic the field effect, i.e., a pioneering demonstration of current switching as a function of irradiance in an EGVFET. The research provides valuable insights into the charge transport characterization of spray-pyrolyzed ZnO-based transistors, paving the way for future nano- and optoelectronic applications.
Assuntos Scopus
Charge transport mechanisms , Electrolyte gate , Electrolyte-gated transistor , Field-effect , Gate transistors , Schottky diodes , Transistor channels , Vertical field effect transistors , Vertical phototransistor , Vertical transistors
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