Electrolyte-Gated Vertical Transistor Charge Transport Enables Photo-Switching

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dc.contributor.authorVieira D.H.
dc.contributor.authorNogueira G.L.
dc.contributor.authorMerces L.
dc.contributor.authorBufon C.C.B.
dc.contributor.authorAlves N.
dc.date.accessioned2024-03-12T19:07:24Z
dc.date.available2024-03-12T19:07:24Z
dc.date.issued2024
dc.description.abstract© 2024 The Authors. Advanced Electronic Materials published by Wiley-VCH GmbH.Proposals for new architectures that shorten the length of the transistor channel without the need for high-end techniques are the focus of very recent breakthrough research. Although vertical and electrolyte-gate transistors are previously developed separately, recent advances have introduced electrolytes into vertical transistors, resulting in electrolyte-gated vertical field-effect transistors (EGVFETs), which feature lower power consumption and higher capacitance. Here, EGVFETs are employed to study the charge transport mechanism of spray-pyrolyzed zinc oxide (ZnO) films to develop a new photosensitive switch concept. The EGVFET's diode cell revealed a current-voltage relationship arising from space-charge-limited current (SCLC), whereas its capacitor cell provided the field-effect role in charge accumulation in the device's source perforations. The findings elucidate how the field effect causes a continuous shift in SCLC regimes, impacting the switching dynamics of the transistor. It is found ultraviolet light may mimic the field effect, i.e., a pioneering demonstration of current switching as a function of irradiance in an EGVFET. The research provides valuable insights into the charge transport characterization of spray-pyrolyzed ZnO-based transistors, paving the way for future nano- and optoelectronic applications.
dc.identifier.doi10.1002/aelm.202300562
dc.identifier.urihttps://dspace.mackenzie.br/handle/10899/33963
dc.relation.ispartofAdvanced Electronic Materials
dc.rightsAcesso Aberto
dc.subject.otherlanguagecharge transport mechanism
dc.subject.otherlanguageelectrolyte-gated transistor
dc.subject.otherlanguageSchottky diode
dc.subject.otherlanguagespray pyrolysis
dc.subject.otherlanguagevertical phototransistor
dc.titleElectrolyte-Gated Vertical Transistor Charge Transport Enables Photo-Switching
dc.typeArtigo
local.scopus.citations0
local.scopus.eid2-s2.0-85182702041
local.scopus.subjectCharge transport mechanisms
local.scopus.subjectElectrolyte gate
local.scopus.subjectElectrolyte-gated transistor
local.scopus.subjectField-effect
local.scopus.subjectGate transistors
local.scopus.subjectSchottky diodes
local.scopus.subjectTransistor channels
local.scopus.subjectVertical field effect transistors
local.scopus.subjectVertical phototransistor
local.scopus.subjectVertical transistors
local.scopus.updated2024-10-01
local.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85182702041&origin=inward
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