Identification of Self-Buffer Layer on GaN/glass Films Grown by Reactive Sputtering
Tipo
Artigo
Data de publicação
2023
Periódico
Materials Research
Citações (Scopus)
1
Autores
de Oliveira R.S.
Folli H.A.
Horta I.M.
Damasceno B.S.
Augstrose J.H.C.
Miyakawa W.
Pereira A.L.J.
Massi M.
da Silva Sobrinho A.S.
Leite D.M.G.
Folli H.A.
Horta I.M.
Damasceno B.S.
Augstrose J.H.C.
Miyakawa W.
Pereira A.L.J.
Massi M.
da Silva Sobrinho A.S.
Leite D.M.G.
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Resumo
© 2023 Universidade Federal de Sao Carlos. All rights reserved.This work reports on the properties of GaN films grown by reactive magnetron sputtering onto glass substrate kept at relatively low temperature (400°C), using different RF power applied to the Ga target. Their structural, morphological, vibrational and optical properties were characterized by X-ray diffraction, atomic force and scanning electron microscopies, Raman spectroscopy and UV-vis spectrophotometry. The films have wurtzite phase with strong preferential orientation in the c-axis direction. Moreover, two clear contributions to the (0002) diffraction peak could be found, indicating the presence of two different morphologies, which were discussed in terms of the formation of an intermediate layer between the substrate and a dominating columnar-like microstructured film.
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Assuntos Scopus
Atomic force , GaN film , Glass films , Glass substrates , Lows-temperatures , Property , Reactive magnetron sputtering , RF power , UV-vis spectrophotometry , X- ray diffractions