Field effect transistors based on graphene micro wires defined by lithography and plasma etching

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dc.contributor.authorRufino F.C.
dc.contributor.authorPascon A.M.
dc.contributor.authorLarrude D.G.
dc.contributor.authorDiniz J.A.
dc.date.accessioned2024-03-12T23:56:24Z
dc.date.available2024-03-12T23:56:24Z
dc.date.issued2018
dc.description.abstract© 2018 IEEE.In this work, Field Effect Transistors based on Graphene (GraFETs) were fabricated, with the current conduction channel with 10 wires (width of 0.36mu m each) in parallel, using the process steps of lithography and oxygen plasma etching. Furthermore, alternatives films, such as TiOx, as gate dielectric, and TiN, as metal electrodes, were used in these devices. Raman spectroscopy, used to identify the integrity of the Chemical Vapor Deposition (CVD) graphene layer during the fabrication, indicated that the graphene channel is formed by monolayer structure with high quality, which are important characteristics to get GraFET devices. SEM analyses, used to identify the device surfaces, indicated that it is possible to obtain the GraFET channel with 10 graphene wires in parallel. To finalize, all current-voltage curves indicated that GraFETs are working and our fabrication method can be used in device and circuit technology based on graphene.
dc.identifier.doi10.1109/SBMicro.2018.8511458
dc.identifier.urihttps://dspace.mackenzie.br/handle/10899/35447
dc.relation.ispartof33rd Symposium on Microelectronics Technology and Devices, SBMicro 2018
dc.rightsAcesso Restrito
dc.subject.otherlanguageCVD graphene
dc.subject.otherlanguageField effect transistor
dc.subject.otherlanguageTiN metal electrodes
dc.subject.otherlanguageTiOx gate dielectric
dc.titleField effect transistors based on graphene micro wires defined by lithography and plasma etching
dc.typeArtigo de evento
local.scopus.citations3
local.scopus.eid2-s2.0-85057371308
local.scopus.subjectChemical vapor depositions (CVD)
local.scopus.subjectCircuit technology
local.scopus.subjectCurrent conduction
local.scopus.subjectCurrent voltage curve
local.scopus.subjectCVD graphene
local.scopus.subjectMetal electrodes
local.scopus.subjectMonolayer structures
local.scopus.subjectOxygen plasma etching
local.scopus.updated2024-05-01
local.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85057371308&origin=inward
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