Field effect transistors based on graphene micro wires defined by lithography and plasma etching

Rufino F.C.; Pascon A.M.; Larrude D.G.; Diniz J.A.

Field effect transistors based on graphene micro wires defined by lithography and plasma etching

Tipo

Artigo de evento

Data de publicação

2018

Periódico

33rd Symposium on Microelectronics Technology and Devices, SBMicro 2018

Citações (Scopus)

3

Autores

Rufino F.C.
Pascon A.M.
Larrude D.G.
Diniz J.A.

Resumo

© 2018 IEEE.In this work, Field Effect Transistors based on Graphene (GraFETs) were fabricated, with the current conduction channel with 10 wires (width of 0.36mu m each) in parallel, using the process steps of lithography and oxygen plasma etching. Furthermore, alternatives films, such as TiOx, as gate dielectric, and TiN, as metal electrodes, were used in these devices. Raman spectroscopy, used to identify the integrity of the Chemical Vapor Deposition (CVD) graphene layer during the fabrication, indicated that the graphene channel is formed by monolayer structure with high quality, which are important characteristics to get GraFET devices. SEM analyses, used to identify the device surfaces, indicated that it is possible to obtain the GraFET channel with 10 graphene wires in parallel. To finalize, all current-voltage curves indicated that GraFETs are working and our fabrication method can be used in device and circuit technology based on graphene.

Assuntos Scopus

Chemical vapor depositions (CVD) , Circuit technology , Current conduction , Current voltage curve , CVD graphene , Metal electrodes , Monolayer structures , Oxygen plasma etching