Fabrication and characterization of silicon nitride waveguides for mid-infrared applications
Tipo
Artigo de evento
Data de publicação
2019
Periódico
2019 SBFoton International Optics and Photonics Conference, SBFoton IOPC 2019
Citações (Scopus)
1
Autores
De Oliveira E.C.
Gerosa R.M.
Phelan C.
De Matos C.J.S.
Gerosa R.M.
Phelan C.
De Matos C.J.S.
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Resumo
© 2019 IEEE.This work describes the fabrication and characterization of silicon nitride waveguides for operation in the 2 μm to 3 μm range. Fabrication was carried out via PECVD and lithography techniques. Transmission losses were measured, with a tunable laser, to be ~20 dB between 2.0 μm and 2.3 μm, increasing to ~30 dB between 2.3 μm and 2.6 μm. Beyond 2.8 μm no transmission was detected, possibly due to the presence of hydrogen in the silicon nitride material (leading to absorption). Losses in the 2.0 μm to 2.6 μm range are believed to be a consequence of scattering, as the waveguides presented an RMS roughness of ~5 nm. Future work will focus on reducing these sources of absorption and scattering so that operation can be extended to the 4 μm range.
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Assuntos Scopus
Absorption and scatterings , Fabrication and characterizations , Graphene plasmons , Integrated waveguides , Midinfrared , Nitride materials , Silicon nitride waveguides , Transmission loss