Analysing the Functioning Mechanisms and Potential Improvements Concerning Graphene-Assisted Electro-Optical Modulators

Tipo
Artigo de evento
Data de publicação
2019
Periódico
2018 SBFoton International Optics and Photonics Conference, SBFoton IOPC 2018
Citações (Scopus)
0
Autores
Marques I.A.
Kamiha G.H.
Martinez G.
De Oliveira R.E.P.
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Resumo
© 2018 IEEE. Silicon photonics-based optical modulators embedded with graphene have been demonstrated operating in bandwidths ranging from 2.7 to 30 GHz. Such devices sport compact footprints (μm 2 range, against todays mm 2 areas) and demand low energy per bit values (sub-pJ range) for high-speed applications in the C-band of telecommunications (1550 nm). This paper contributes by examining the role that resistance and capacitance optimization play in increasing electro-optical bandwidth and reducing energy per bit consumption, as well as the limits concerning these improvements by approaching previously proposed architectures through updated resistance reduction techniques and a more realistic analysis regarding device's capacitance.
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Assuntos Scopus
1550 nm , Electro-optical , Electrooptical modulators , Energy-per-bit , High-speed applications , performance , Proposed architectures , Resistance reduction
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