Intralayer and interlayer electron-phonon interactions in twisted graphene heterostructures

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Artigo
Data de publicação
2018
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Nature Communications
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92
Autores
Eliel G.S.N.
Moutinho M.V.O.
Gadelha A.C.
Righi A.
Campos L.C.
Ribeiro H.B.
Chiu P.-W.
Watanabe K.
Taniguchi T.
Puech P.
Paillet M.
Michel T.
Venezuela P.
Pimenta M.A.
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© 2018 The Author(s).The understanding of interactions between electrons and phonons in atomically thin heterostructures is crucial for the engineering of novel two-dimensional devices. Electron-phonon (el-ph) interactions in layered materials can occur involving electrons in the same layer or in different layers. Here we report on the possibility of distinguishing intralayer and interlayer el-ph interactions in samples of twisted bilayer graphene and of probing the intralayer process in graphene/h-BN by using Raman spectroscopy. In the intralayer process, the el-ph scattering occurs in a single graphene layer and the other layer (graphene or h-BN) imposes a periodic potential that backscatters the excited electron, whereas for the interlayer process the el-ph scattering occurs between states in the Dirac cones of adjacent graphene layers. Our methodology of using Raman spectroscopy to probe different types of el-ph interactions can be extended to study any kind of graphene-based heterostructure.
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