Analysis 1T' - MoTe2 Saturable Absorber Integrated to a Silicon Nitride Waveguide
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Data de publicação
2024
Periódico
2024 SBFoton International Optics and Photonics Conference, SBFoton IOPC 2024
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0
Autores
Volpato M.C.
Rosa H.G.
De Assis P.-L.
Frateschi N.C.
Rosa H.G.
De Assis P.-L.
Frateschi N.C.
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© 2024 IEEE.In this work, we investigate the saturable absorption behavior of a 1T' -textMoTe2 monolayer placed on top of a silicon nitride waveguide. Saturable absorption is modeled by calculating the quasi-Fermi level separation upon light absorption and carrier generation. After simulating the coupling between the monolayer and a silicon nitride waveguide, we propose an integrated saturable absorber with 20 % coupling efficiency and about 2 μW of saturation intensity, for a typical monolayer of 50 μm. Our results demonstrate significant potential for IT'- textMoTe2 in on-chip photonic devices, offering a compact and efficient alternative to conventional absorbers.
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Assuntos Scopus
2d material , Carrier generation , Coupling efficiency , Ditelluride , Integrated photonics , Molyb-denum ditelluride , Quasi-fermi level separations , Saturable absorption , Saturable absorption behavior , Silicon nitride waveguides