Oxygen vacancy engineering of TaO x-based resistive memories by Zr doping for improved variability and synaptic behavior

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dc.contributor.authorPalhares J.H.Q.
dc.contributor.authorBeilliard Y.
dc.contributor.authorAlibart F.
dc.contributor.authorBonturim E.
dc.contributor.authorDe Florio D.Z.
dc.contributor.authorFonseca F.C.
dc.contributor.authorDrouin D.
dc.contributor.authorFerlauto A.S.
dc.date.accessioned2024-03-12T19:19:07Z
dc.date.available2024-03-12T19:19:07Z
dc.date.issued2021
dc.description.abstract© 2021 The Author(s). Published by IOP Publishing Ltd.Resistive switching (RS) devices are promising forms of non-volatile memory. However, one of the biggest challenges for RS memory applications is the device-to-device (D2D) variability, which is related to the intrinsic stochastic formation and configuration of oxygen vacancy (VO) conductive filaments (CFs). In order to reduce the D2D variability, control over the formation and configuration of oxygen vacancies is paramount. In this study, we report on the Zr doping of TaO x -based RS devices prepared by pulsed-laser deposition as an efficient means of reducing the VO formation energy and increasing the confinement of CFs, thus reducing D2D variability. Our findings were supported by XPS, spectroscopic ellipsometry and electronic transport analysis. Zr-doped films showed increased VO concentration and more localized VOs, due to the interaction with Zr. DC and pulse mode electrical characterization showed that the D2D variability was decreased by a factor of seven, the resistance window was doubled, and a more gradual and monotonic long-term potentiation/depression in pulse switching was achieved in forming-free Zr:TaO x devices, thus displaying promising performance for artificial synapse applications.
dc.description.issuenumber40
dc.description.volume32
dc.identifier.doi10.1088/1361-6528/ac0e67
dc.identifier.issn1361-6528
dc.identifier.urihttps://dspace.mackenzie.br/handle/10899/34585
dc.relation.ispartofNanotechnology
dc.rightsAcesso Aberto
dc.subject.otherlanguagedoping
dc.subject.otherlanguagememristor
dc.subject.otherlanguageoxygen vacancy engineering
dc.subject.otherlanguageresistive switching
dc.subject.otherlanguagesynaptic behavior
dc.subject.otherlanguageTaOx
dc.subject.otherlanguagevariability
dc.titleOxygen vacancy engineering of TaO x-based resistive memories by Zr doping for improved variability and synaptic behavior
dc.typeArtigo
local.scopus.citations10
local.scopus.eid2-s2.0-85111125328
local.scopus.subjectConductive filaments
local.scopus.subjectElectrical characterization
local.scopus.subjectElectronic transport
local.scopus.subjectLong-term potentiations
local.scopus.subjectMemory applications
local.scopus.subjectNon-volatile memory
local.scopus.subjectStochastic formation
local.scopus.subjectVacancy engineering
local.scopus.updated2024-12-01
local.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85111125328&origin=inward
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