Chaveamento elétrico de dispositivos para modulação óptica baseados em grafeno

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dc.contributor.advisorSaito, Lúcia Akemi Miyazato
dc.contributor.advisor1Latteshttp://lattes.cnpq.br/0915583034741895por
dc.contributor.authorAraújo, Maria Cecília Schineider
dc.creator.Latteshttp://lattes.cnpq.br/6789262230736216por
dc.date.accessioned2020-03-30T17:53:41Z
dc.date.accessioned2020-05-28T18:08:57Z
dc.date.available2020-05-28T18:08:57Z
dc.date.issued2019-06-07
dc.description.abstractThe graphene-based electro-optic modulator composed by a D-shaped optical fiber and a capacitive structure with a polymethylmethacrylate (PMMA) superstrate of 700 nm thickness on the polished side was analyzed by simulation. The drive voltage between the Fermi level of 300 meV and 500 meV was 11.9 V for transverse electric (TE) mode, resulting in a modulation depth of approximately 3 dB at 1 GHz for the dielectric thickness of 50 nm. Based on these results, the goal of this work was to develop, characterize and evaluate the graphene electro-optic modulator manufacturing process, by analyzing the assembly of 2 structures: (1) the Field Effect Transistor (FET) structure on the commercial D-shaped optical fiber, presenting the extinction rate (ER) of 12,72% and insertion loss of 2,6 dB; (2) the capacitive structure with LiClO4 ionic gel on the glass blades presented the capacitance of 1.53 pF that was considered to calculate its relative permittivity 𝜀𝑟 of 5.46 and frequency of 4.8 MHz. On the D-shaped optical fiber immersed in the glass resin and polished manually, it was achieved the extinction rate of 55% and insertion loss of 13.7 dB. Although the FET structure showed lower insertion loss, the capacitive structure resulted in a higher extinction rate, demonstrating the possibility of switching and electro-optical modulation, which require the optimization of the polishing process and ionic gel solution.eng
dc.description.sponsorshipCoordenação de Aperfeiçoamento de Pessoal de Nível Superiorpor
dc.description.sponsorshipFundação de Amparo a Pesquisa do Estado de São Paulopor
dc.description.sponsorshipFundo Mackenzie de Pesquisapor
dc.formatapplication/pdf*
dc.identifier.citationARAÚJO, Maria Cecília Schineider. Chaveamento elétrico de dispositivos para modulação óptica baseados em grafeno. 2019. 94 f. Dissertação ( Engenharia Elétrica ) - Universidade Presbiteriana Mackenzie, São Paulo, 2019.por
dc.identifier.urihttp://dspace.mackenzie.br/handle/10899/24500
dc.keywordsgraphene modulatoreng
dc.keywordsD-shaped optical fibereng
dc.keywordsgraphene capacitoreng
dc.keywordsField Effect Transistoreng
dc.keywordsFermi level switchingpor
dc.languageporpor
dc.publisherUniversidade Presbiteriana Mackenziepor
dc.rightsAcesso Abertopor
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/
dc.subjectmodulador a base de grafenopor
dc.subjectfibra óptica de perfil D,por
dc.subjectcapacitor de grafenopor
dc.subjectField Effect Transistorpor
dc.subjectchaveamento do nível de Fermi.por
dc.subject.cnpqCNPQ::ENGENHARIAS::ENGENHARIA ELETRICApor
dc.titleChaveamento elétrico de dispositivos para modulação óptica baseados em grafenopor
dc.typeDissertaçãopor
local.contributor.board1Souza, Eunézio Antônio de
local.contributor.board1Latteshttp://lattes.cnpq.br/9756214150140645por
local.contributor.board2Kalinowski, Hypólito José
local.contributor.board2Latteshttp://lattes.cnpq.br/6560372925252581por
local.publisher.countryBrasilpor
local.publisher.departmentEscola de Engenharia Mackenzie (EE)por
local.publisher.initialsUPMpor
local.publisher.programEngenharia Elétricapor
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