Effect of SF6 Plasma Etching on the Optical, Morphological and Structural Properties of SiC Films

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dc.contributor.authorde Almeida Maribondo Galvao N.K.
dc.contributor.authorGodoy Junior A.
dc.contributor.authorde Jesus Pereira A.L.
dc.contributor.authorMartins G.V.
dc.contributor.authorPessoa R.S.
dc.contributor.authorMaciel H.S.
dc.contributor.authorFraga M.A.
dc.date.accessioned2024-03-12T19:07:55Z
dc.date.available2024-03-12T19:07:55Z
dc.date.issued2023
dc.description.abstract© 2023, The Author(s), under exclusive licence to Springer Nature B.V.Amorphous silicon carbide (a-SiC) films hold promise for microelectronic and MEMS devices. Prior to their use in microfabricated devices, these films undergo plasma etching. This study investigates reactive ion etching (RIE) of sputtered a-SiC films on Si (100) substrates using sulfur hexafluoride (SF6) gas. The focus is on the impact of RF power on the thickness, structure, chemistry, and morphology of the SiC film. Grazing Incidence X-ray Diffraction (GIXRD) analysis of the etched samples indicates crystalline SiC formation at low temperatures. Surface morphology analysis using Field Emission Scanning Electron Microscopy (FESEM) confirms the GIXRD results. The RIE process unintentionally induces crystallization of a-SiC films, but adjusting etching process parameters allows control over film crystallinity.
dc.description.firstpage7745
dc.description.issuenumber18
dc.description.lastpage7754
dc.description.volume15
dc.identifier.doi10.1007/s12633-023-02618-w
dc.identifier.issn1876-9918
dc.identifier.urihttps://dspace.mackenzie.br/handle/10899/33990
dc.relation.ispartofSilicon
dc.rightsAcesso Restrito
dc.subject.otherlanguageAmorphous film
dc.subject.otherlanguageCrystallization
dc.subject.otherlanguagePlasma etching
dc.subject.otherlanguageSilicon carbide
dc.titleEffect of SF6 Plasma Etching on the Optical, Morphological and Structural Properties of SiC Films
dc.typeArtigo
local.scopus.citations1
local.scopus.eid2-s2.0-85167522332
local.scopus.subjectEtching process
local.scopus.subjectGrazing incidence X-ray diffraction
local.scopus.subjectGrazing-incidence X-ray diffraction
local.scopus.subjectMicrofabricated devices
local.scopus.subjectOptical-
local.scopus.subjectReactive-ion etching
local.scopus.subjectRF power
local.scopus.subjectSi (100) substrate
local.scopus.subjectSiC films
local.scopus.subjectSilicon carbide films
local.scopus.updated2024-10-01
local.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85167522332&origin=inward
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