Structural, Morphological, Vibrational and Optical Properties of GaN Films Grown by Reactive Sputtering: The Effect of RF Power at Low Working Pressure Limit

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dc.contributor.authorDe Oliveira R.S.
dc.contributor.authorFolli H.A.
dc.contributor.authorStegemann C.
dc.contributor.authorHorta I.M.
dc.contributor.authorDamasceno B.S.
dc.contributor.authorMiyakawa W.
dc.contributor.authorPereira A.L.J.
dc.contributor.authorMassi M.
dc.contributor.authorDa Silva Sobrinho A.S.
dc.contributor.authorLeite D.M.G.
dc.date.accessioned2024-03-12T19:17:48Z
dc.date.available2024-03-12T19:17:48Z
dc.date.issued2022
dc.description.abstract© 2022 Universidade Federal de Sao Carlos. All rights reserved.This work reports the properties of GaN films grown onto c-Si (100) at relatively low substrate temperature (400°C) by reactive magnetron sputtering. The study depicts the effect of working pressure and RF power on the GaN film structural, vibrational and optical properties characterized by X-ray diffraction, atomic force and scanning electron microscopies, Raman spectroscopy and spectroscopic ellipsometry. Unusual low pressure deposition condition (0.40 Pa) was achieved by using a separated argon inlet directed to the Ga target surface, resulting in improved crystalline quality of the films. In this condition, the preferential crystalline orientation, the surface morphology and the optical gap of the GaN films show a strong dependence on the RF power applied to the Ga target, where low RF power (30-60 W) was responsible for increasing the c-axis orientation and the optical gap, while higher RF power (75-90 W) decreased the overall crystal quality and increased the surface roughness.
dc.description.volume25
dc.identifier.doi10.1590/1980-5373-MR-2021-0432
dc.identifier.issn1980-5373
dc.identifier.urihttps://dspace.mackenzie.br/handle/10899/34517
dc.relation.ispartofMaterials Research
dc.rightsAcesso Aberto
dc.subject.otherlanguageGaN
dc.subject.otherlanguageReactive sputtering
dc.subject.otherlanguageThin film
dc.titleStructural, Morphological, Vibrational and Optical Properties of GaN Films Grown by Reactive Sputtering: The Effect of RF Power at Low Working Pressure Limit
dc.typeArtigo
local.scopus.citations6
local.scopus.eid2-s2.0-85122878195
local.scopus.subjectGaN film
local.scopus.subjectLow substrate temperature
local.scopus.subjectOptical-gap
local.scopus.subjectPressure limits
local.scopus.subjectProperty
local.scopus.subjectReactive magnetron sputtering
local.scopus.subjectRF power
local.scopus.subjectSi(1 0 0)
local.scopus.subjectThin-films
local.scopus.subjectWorking pressures
local.scopus.updated2024-12-01
local.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85122878195&origin=inward
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