All-fiber graphene electro-optic modulators with different dielectric materials

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dc.contributor.authorBonando M.G.
dc.contributor.authorAraujo M.C.S.
dc.contributor.authorSaito L.A.M.
dc.date.accessioned2024-03-12T23:54:02Z
dc.date.available2024-03-12T23:54:02Z
dc.date.issued2019
dc.description.abstract© 2018 IEEE.We present a comparison of all-fiber graphene electro-Absorption optical modulators built onto a side-polished optical fiber using different dielectric materials such as aluminum oxide (Al2O3), hafnium oxide (HfO2) and hexagonal boron nitride (h-BN). Although HfO2 model resulted in a higher modulation depth with a thinner dielectric thickness, in the device comparison, h-BN and Al2O3 models can be operated by higher operating frequency limit. For a PMMA superstrate thickness of 100 and 700 nm, the analysis presents a modulation depth of 11.13 dB/mm and 12.42 dB/mm, drive voltage of 45.75 and 8.51 V and cutoff frequency of 3.75 and 0.76 GHz, respectively. Considering a required modulation depth, the h-BN thickness is 2.67 and 3.12 times smaller than required for Al2O3 modulator.
dc.identifier.doi10.1109/SBFoton-IOPC.2018.8610909
dc.identifier.urihttps://dspace.mackenzie.br/handle/10899/35316
dc.relation.ispartof2018 SBFoton International Optics and Photonics Conference, SBFoton IOPC 2018
dc.rightsAcesso Restrito
dc.subject.otherlanguageAl2O3
dc.subject.otherlanguageelectro-Absorption
dc.subject.otherlanguagegraphene-based modulator
dc.subject.otherlanguageh-BN
dc.subject.otherlanguageHfO2
dc.subject.otherlanguageside-polished optical fiber
dc.titleAll-fiber graphene electro-optic modulators with different dielectric materials
dc.typeArtigo de evento
local.scopus.citations1
local.scopus.eid2-s2.0-85061991261
local.scopus.subjectAl2O3
local.scopus.subjectElectro-absorption
local.scopus.subjecth-BN
local.scopus.subjectHfO2
local.scopus.subjectSide-polished optical fiber
local.scopus.updated2024-05-01
local.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85061991261&origin=inward
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