Surface Morphology and Spectroscopic Features of Homoepitaxial Diamond Films Prepared by MWPACVD at High CH4 Concentrations

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dc.contributor.authorSierra Gomez J.
dc.contributor.authorVieira J.
dc.contributor.authorFraga M.A.
dc.contributor.authorCorat E.J.
dc.contributor.authorTrava-Airoldi V.J.
dc.date.accessioned2024-03-12T19:13:28Z
dc.date.available2024-03-12T19:13:28Z
dc.date.issued2022
dc.description.abstract© 2022 by the authors.Single crystal diamond (SCD) is a promising material to satisfy emerging requirements of high-demand fields, such as microelectronics, beta batteries and wide-spectrum optical communication systems, due to its excellent optical characteristics, elevated breakdown voltage, high hardness and superior thermal conductivity. For such applications, it is essential to study the optically active defects in as-grown diamonds, namely three-dimensional defects (such as stacking faults and dislocations) and the inherent defects arising from the cultivation method. This paper reports the growth of SCD films on a commercial HPHT single-crystal diamond seed substrate using a 2.45 GHz microwave plasma-assisted chemical vapor deposition (MWPACVD) technique by varying the methane (CH4) gas concentration from 6 to 12%, keeping the other parameters constant. The influence of the CH4 concentration on the properties, such as structural quality, morphology and thickness, of the highly oriented SCD films in the crystalline plane (004) was investigated and compared with those on the diamond substrate surface. The SCD film thickness is dependent on the CH4 concentration, and a high growth rate of up to 27 µm/h can be reached. Raman spectroscopy, high-resolution X-ray diffractometry (HRXRD), scanning electron microscopy (SEM), surface profilometry and optical microscopic analyses showed that the produced homoepitaxial SCD films are of good quality with few macroscopic defects.
dc.description.issuenumber21
dc.description.volume15
dc.identifier.doi10.3390/ma15217416
dc.identifier.issn1996-1944
dc.identifier.urihttps://dspace.mackenzie.br/handle/10899/34284
dc.relation.ispartofMaterials
dc.rightsAcesso Aberto
dc.subject.otherlanguagedefects
dc.subject.otherlanguagehomoepitaxial growth
dc.subject.otherlanguagemicrowave plasma-assisted CVD
dc.subject.otherlanguagemorphology
dc.subject.otherlanguagesingle crystal diamond
dc.titleSurface Morphology and Spectroscopic Features of Homoepitaxial Diamond Films Prepared by MWPACVD at High CH4 Concentrations
dc.typeArtigo
local.scopus.citations3
local.scopus.eid2-s2.0-85141879838
local.scopus.subjectCH 4
local.scopus.subjectDiamonds films
local.scopus.subjectHigh demand
local.scopus.subjectHomoepitaxial diamond films
local.scopus.subjectHomoepitaxial growth
local.scopus.subjectMicrowave plasma-assisted chemical vapor deposition
local.scopus.subjectMicrowave Plasma-assisted CVD
local.scopus.subjectSingle crystal diamond
local.scopus.subjectSpectroscopic features
local.scopus.subjectWide spectrum
local.scopus.updated2024-12-01
local.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85141879838&origin=inward
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